Two Dimensional Monte Carlo Simulation of Ion Implant ation in Crystalline Silicon Considering Damage Formation
نویسنده
چکیده
Oneand two-dimensional concentration profiles of high-dose boron implants have been computed using our Monte Carlo simulator IMSIL. In the I-D case they have been compared with experiments obtaining very good agreement. The lattice damage formation is taken into account according to the modified Kinchin-Pease model. A factor of 118 was found to properly describe the self-annealing process reducing the amount of lattice defects. In the 2-D case it is observed that the channeling in directions leading below the mask edge is not suppressed in contrast to vertical channeling.
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To my wife, my parents and grandparents Acknowledgement First of all, I would like to thank my supervisors and my role models, Drs. Sanjay K. Banerjee and Al F. Tasch for their invaluable guidance and support throughout my four-year Ph.D. study. Many thanks to Drs. for taking their time to serve on my committee, and for their comments and help. Many thanks also to my fellow workers, and former ...
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تاریخ انتشار 2007